Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs

الصفحات

30-35

مزيد من المنشورات

Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

This paper reports on experimental and theoretical investigation of atyical temperature-dependent photoluminescence properties of InAs quantum dots in close proximity to InGaAs strain-relief…

بواسطة DOI: 10.1016/j.jallcom.2015.09.231

2016

Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers

بواسطة J. Zribi, B. Ilahi, D. Morris, V. Aimez, R. Ares

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Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs

بواسطة B Paquette, B Ilahi, V Aimez, R Ares

2013

Bouraoui ILAHI بوراوي أحمد إيلاهي

Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs