Temperature-dependent scattering processes of n-type
Calculations of the electron mobility of n-type InSb have been performed at different temperature regimes using relaxation
time approximation method. The temperatures were classified into three main categories according to the electron mobility
behavior. A high temperature range was considered from room temperature down to approximately 100 K. Intermediate
temperature range was taken from 100 K down to 50 K. The low range was assumed from 50 K down to 10 K. In these
temperature ranges a number of scattering sources have been discussed. Neutral impurity scattering, ionized impurity
scattering and lattice scattering were analyzed. At high temperature regime, the intrinsic behavior of n-doped InSb was
noticed. At intermediate temperature range the lattice scattering was recorded as the dominant scattering center. The
ionized impurity scattering was thought to be the major one at low temperature region. Comparison with experimental
results was also mentioned.
Numerical calculation of the ideality factor of non ideal diodes has been performed. The diode cell was
modulated in terms of a parallel connected double diode circuit model containing…
The aim of this study is studying the influence of the donor concentration and temperature on the static