Computation of the Effective Hall Factor of p-GaSb
The effective Hall factor (γeff) of p-type GaSb semiconductor was investigated using the
two-band model assuming parabolic valence bands. The calculations were based on the relaxation time
approximation taking into account lattice and impurity scattering effects as a function of the
temperature. Some transport parameters of p-GaSb were determined by assuming that the bands of
heavy and light holes are decoupled. The mobility ratio between the deformation potential and ionized
impurity scattering decreased with elevation of temperature. If the impurity scattering exceeds all other
scattering processes, the approximation of γeff ~ 1 is valid. On the other hand if the lattice scattering
process dominates, the approximation of γeff ~ 1 is not valid. The temperature dependence of the
effective Hall factor was studied. The results showed that the effective Hall factor decreased with
decreasing the temperature.
Numerical calculation of the ideality factor of non ideal diodes has been performed. The diode cell was
modulated in terms of a parallel connected double diode circuit model containing…
The aim of this study is studying the influence of the donor concentration and temperature on the static