Mathematical models of ion implantantion in semiconductor
Making a mathematical model for ion implantation in the silicon semiconducter like transistores, IC, VLSI, WLSI circuits is considered multiple jobs because it requires physical, statistical and computer programing aspects.
This thesis explained the physical side by describing the technology of ion implantation in silicon semiconductor, then a detail of the previous techniques of the latest ion implantation theories in order to introduce a model of ion implantation for impurty in silicon semicondactor.
The statistical aspect is considered the best approach to fill the gap between the mathematical and physical methods by using person type-IV distribution. This method of manuplation to
pearson type -IV is consider a unique established technique.
The computer programing aspect was made by using a MAT.LAB. program which descibes the distribution of impurty in silicon semiconductor.
This program, however,resultes with 81% - 84% accuracy in comparison with previous work in this field.
It is found that the implantation of Boron in silicon, silicon dioxide, and silicon nitrite are very similar to the experimental with the accuracy of 84%, 81%, 84% respectively.