Bouraoui ILAHI
التعريف الشخصي:
received the M.Sc. and Ph.D. degrees in Physics from the University of Tunis El-Manar, Tunisia, in 2001 and 2004, respectively. He's currently associated Professor with the Department of physics and Astronomy, King Saud University, Riyadh, Saudi Arabia. His Research activities include Epitaxial growth, optical spectroscopy and numerical modeling of hetero/nanostructures for optoelectronic and photovoltaic applications. He supervised/co-supervised 5 PhD and 10 Msc and published more than 50 ISI indexed papers
Professional Experience .
Associate Professor at King Saud University/Saudi Arabia 2013-present
Full-time Visiting Professor at University of Sherbrooke/Canada 2012-2013
Associate Professor at University of Carthage/Tunisia 2011-2012
Assistant Professor at University of Monastir/Tunisia 2005 -2010
Main Area of research expertise
- Molecular Beam Epitaxy and Chemical Beam Epitaxy growth and post-growth processing of semiconductor quantum nanostructures: Quantum well/wires /dots
- Optical characterization: photoluminescence, photoreflectance, photoluminescence of excitation, time resolved photoluminescence
- Numerical modeling: carrier’s confinement and charge transfer
- Polymer/nanocomposite for PV application
| List of ISI Publications | |
| Title | Year |
| Photothermal deflection technique investigation of annealing temperature and time effects on optical and thermal conductivity of V/V2O5 alternating layers structure A Khalfaoui, S Ilahi, M Abdel-Rahman, MF Zia, M Alduraibi, B Ilahi, ... Physica B: Condensed Matter 522, 26-30 |
2017 |
| Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers A Salhi, S Alshaibani, B Ilahi, M Alhamdan, A Alyamani, H Albrithen, ... Journal of Alloys and Compounds 714, 331-337 |
2017 |
| Impact of the wetting layer thickness on the emission wavelength of direct band gap GeSn/Ge quantum dots B Ilahi, R Al-Saigh, B Salem, Materials Research Express 4 (7) |
2017 |
| Design of direct band gap type I GeSn/Ge quantum dots for mid‐IR light emitters on Si substrate B Ilahi, physica status solidi (RRL)-Rapid Research Letters 11 (5) |
2017 |
| Fabrication and design of vanadium oxide microbolometer M Abdel-Rahman, N Al-Khalli, MF Zia, M Alduraibi, B Ilahi, E Awad, ... AIP Conference Proceedings 1809 (1), 020001 |
2017 |
| Flexoelectric Induced Caloric Effect in Truncated Pyramid Shaped Ba0. 67Sr0. 33TiO3 Ferroelectric Material S Patel, A Chauhan, NA Madhar, B Ilahi, R Vaish, Journal of Electronic Materials, 1-6 |
2017 |
| Carrier dynamics of strain-engineered InAs quantum dots with (In) GaAs surrounding material O Nasr, N Chauvin, MHH Alouane, H Maaref, C Bru-Chevallier, L Sfaxi, ... Journal of Optics 19 (2), 025401 |
2017 |
| Thermal annealing induced multiple phase in V/V2O5 alternating multilayer structure B Ilahi, M Abdel-Rahman, Z Zaaboub, MF Zia, M Alduraibi, H Maaref International Journal of Modern Physics B 30 (27), 1650210 |
2017 |
| In-situ height engineering of InGaAs/GaAs quantum dots by chemical beam epitaxy J Zribi, D Morris, B Ilahi, A Aldhubaib, V Aimez, R Ares Journal of Nanophotonics 10 (3), 033502-033502 |
2016 |
| Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography B Ilahi, J Zribi, M Guillotte, R Arès, V Aimez, D Morris Materials 9 (7), 511 |
2016 |
| Synthesis and electrical characterisation of vanadium oxide thin film thermometer for microbolometer applications MF Zia, M Abdel-Rahman, M Alduraibi, B Ilahi, A Alasaad Electronics Letters 52 (10), 827-828 |
2016 |
| Effect of dot-height truncation on the device performance of multilayer InAs/GaAs quantum dot solar cells J Zribi, B Ilahi, B Paquette, A Jaouad, O Thériault, K Hinzer, R Cheriton, ... IEEE Journal of Photovoltaics 6 (2), 584-589 |
2016 |
| Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing B Ilahi, O Nasr, B Paquette, MHH Alouane, N Chauvin, B Salem, L Sfaxi, ... Journal of Alloys and Compounds 656, 132-137 |
2016 |
| Efficient Solar Energy Conversion Using CaCu3Ti4O12 Photoanode for Photocatalysis and Photoelectrocatalysis HS Kushwaha, NA Madhar, B Ilahi, P Thomas, A Halder, R Vaish Scientific reports 6 |
2016 |
| Functionalized silicon nanowires/conjugated polymer hybrid solar cells: Optical, electrical and morphological characterizations N Chehata, A Ltaief, E Beyou, B Ilahi, B Salem, T Baron, P Gentile, ... Journal of Luminescence 168, 315-324 |
2015 |
| Modelling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well M Souaf, M Baira, H Maaref, B Ilahi arXiv preprint arXiv:1510.06539 |
2015 |
| Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions A Fekecs, M Chicoine, B Ilahi, AJ SpringThorpe, F Schiettekatte, D Morris, ... Nuclear Instruments and Methods in Physics Research Section B: Beam ... |
2015 |
| Microstructural evolution of a recrystallized Fe‐implanted InGaAsP/InP heterostructure A Fekecs, A Korinek, M Chicoine, B Ilahi, F Schiettekatte, D Morris, R Arès physica status solidi (a) 212 (9), 1888-1896 |
2015 |
| Tuning of dielectric, pyroelectric and ferroelectric properties of 0.715 Bi0. 5Na0. 5TiO3-0.065 BaTiO3-0.22 SrTiO3 ceramic by internal clamping S Patel, A Chauhan, S Kundu, NA Madhar, B Ilahi, R Vaish, KBR Varma AIP Advances 5 (8), 087145 |
2015 |
| Temperature coefficient of resistance and thermal conductivity of Vanadium oxide ‘Big Mac’sandwich structure M Abdel-Rahman, S Ilahi, MF Zia, M Alduraibi, N Debbar, N Yacoubi, ... Infrared Physics & Technology 71, 127-130 |
2015 |
| Investigation of the InAs/GaAs quantum dots’ size: dependence on the strain reducing layer’s position M Souaf, M Baira, O Nasr, MHH Alouane, H Maaref, L Sfaxi, B Ilahi Materials 8 (8), 4699-4709 |
2015 |
| Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate B Azeza, MH Hadj Alouane, B Ilahi, G Patriarche, L Sfaxi, A Fouzri, ... Materials 8 (7), 4544-4552 |
2015 |
| Evolution of inas/gaas QDs size with the growth rate: a numerical investigation B Ilahi, M Souaf, M Baira, J Alrashdi, L Sfaxi, A Alhazaa, H Maaref Journal of Nanomaterials 16 (1), 287 |
2015 |
| Hybrid nanocomposites based on conducting polymer and silicon nanowires for photovoltaic application N Chehata, A Ltaief, B Ilahi, B Salem, A Bouazizi, H Maaref, T Baron, ... Journal of Luminescence 156, 30-35 |
2014 |
| Postgrowth intermixing of strain engineered InAs/GaAs quantum dots O Nasr, MHH Alouane, B Ilahi, B Salem, L Sfaxi, H Maaref Journal of Alloys and Compounds 615, 683-686 |
2014 |
| Corrigendum to “Improved photovoltaic performance of silicon nanowires/conjugated polymer hybrid solar cells”[Synth. Met. 191 (2014) 6–11] N Chehata, A Ltaief, B Ilahi, B Salem, A Bouazizi, H Maaref, E Beyou, ... Synthetic Metals 195, 340 |
2014 |
| Numerical investigation of the postgrowth intermixing effects on the optical properties of InAs/GaAs quantum dots M Souaf, M Baira, B Ilahi, L Saxi, H Maaref Physica B: Condensed Matter 447, 7-11 |
2014 |
| Improved photovoltaic performance of silicon nanowires/conjugated polymer hybrid solar cells N Chehata, A Ltaief, B Ilahi, B Salam, A Bouazizi, H Maaref, E Beyou Synthetic Metals 191, 6-11 |
2014 |
| Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In) GaAs surrounding material O Nasr, MHH Alouane, H Maaref, F Hassen, L Sfaxi, B Ilahi Journal of Luminescence 148, 243-248 |
2014 |
| Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution MHH Alouane, A Helali, D Morris, H Maaref, V Aimez, B Salem, M Gendry, ... Journal of Luminescence 145, 595-599 |
2014 |
| Corrigendum to “Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs”[J. Cryst. Growth 383C (2013) 30–35] B Paquette, B Ilahi, V Aimez, R Arès Journal of Crystal Growth, 342-343 |
2014 |
| Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers DMRA Jihene Zribi, Bouraoui Ilahi Journal of Crystal Growth 384, 21-26 |
2013 |
| Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAs B Paquette, B Ilahi, V Aimez, R Arès Journal of Crystal Growth 383, 30-35 |
2013 |
| Effect of functionalisation of MWCNTs on optical and morphological properties of MEH–PPV/MWCNTs nanocomposites AB N. Chehata, A. Ltaief, A. Farzi, B. Ilahi International Journal of Nanotechnology 10 (5-7), 577/586 |
2013 |
| Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing A Fekecs, M Chicoine, B Ilahi, F Schiettekatte, PG Charette, R Arès Journal of Physics D: Applied Physics 46 (16), 165106 |
2013 |
| Structural Fingerprints in Temperature-dependent Hall Measurements after Ion Implantation Amorphization and Recrystallization of InGaAsP/InP RA André Fekecs, Bouraoui Ilahi, Martin Chicoine The 25th International Conference on Amorphous and Nano-crystalline ... |
2013 |
| Excitonic properties of wurtzite InP nanowires grown on silicon substrate MHH Alouane, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ... Nanotechnology 24 (3), 035704 |
2012 |
| InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates H Khmissi, K Naji, MHH Alouane, N Chauvin, C Bru-Chevallier, B Ilahi, ... Journal of Crystal Growth 344 (1), 45-50 |
2012 |
| Structural and Optical Properties of GaAs1− x N x/GaAs Grown by Molecular Beam Epitaxy F Saidi, R Hamila, B Ilahi, A Fouzri, M Khalfioui, H Maaref Sensor Letters 9 (6), 2316-2319 |
2011 |
| InAs quantum dots on different Ga (In) As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic MHH Alouane, B Ilahi, L Sfaxi, H Maaref Journal of Nanoparticle Research 13 (11), 5809-5813 |
2011 |
| Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing MH Hadj Alouane, B Ilahi, H Maaref, B Salem, V Aimez, D Morris, ... Journal of nanoscience and nanotechnology 11 (10), 9251-9255 |
2011 |
| Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate MHH Alouane, R Anufriev, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ... Nanotechnology 22 (40), 405702 |
2011 |
| Optical properties of wurtzite InAs/InP core-shell nanowires grown on silicon substrates H Khmissi, MHH Alouane, N Chauvin, K Naji, G Patriarche, B Ilahi, ... IPRM 2011-23rd International Conference on Indium Phosphide and Related ... |
2011 |
| Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes MHH Alouane, B Ilahi, H Maaref, B Salem, V Aimez, D Morris, A Turala, ... Journal of Applied Physics 108 (2), 024317 |
2010 |
| Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots Z Zaâboub, B Ilahi, B Salem, V Aimez, D Morris, L Sfaxi, H Maaref Journal of Applied Physics 107 (12), 124306 |
2010 |
| Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing B Ilahi, Z Zaâboub, B Salem, D Morris, V Aimez, L Sfaxi, H Maaref Materials Science in Semiconductor Processing 12 (1), 71-74 |
2009 |
| Thermal-induced intermixing effects on the optical properties of long wavelength low density InAs/GaAs quantum dots Z Zaâboub, B Ilahi, L Sfaxi, H Maaref Materials Science and Engineering: C 28 (5), 1002-1005 |
2008 |
| Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots' intermixing Z Zaâboub, B Ilahi, L Sfaxi, H Maaref, B Salem, V Aimez, D Morris Physics Letters A 372 (26), 4714-4717 |
2008 |
| Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots B Ilahi, L Sfaxi, H Maaref, B Salem, V Aimez, D Morris Nanotechnology 19 (28), 285715 |
2008 |
| Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment B Ilahi, L Sfaxi, H Maaref Journal of Luminescence 127 (2), 741-746 |
2007 |
| Optical characterisation of single InAs quantum dots on GaAs substrate emitting at 1.3 μm N Chauvin, M Baira, C Bru‐Chevallier, B Ilahi, L Sfaxi, H Maaref physica status solidi (c) 3 (11), 3672-3675 |
2006 |
| Toward long wavelength low density InAs/GaAs quantum dots B Ilahi, L Sfaxi, E Tranvouez, G Brémond, M Baïra, C Bru-Chevalier, ... Physics Letters A 357 (4), 360-363 |
2006 |
| Tuning optical properties of high In content InGaAs/GaAs capped InAs quantum dots by post growth rapid thermal annealing B Ilahi, L Sfaxi, G Bremond, H Maaref Materials Science and Engineering: C 26 (5), 971-974 |
2006 |
| Post-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing B Ilahi, B Salem, V Aimez, L Sfaxi, H Maaref, D Morris Nanotechnology 17 (15), 3707 |
2006 |
| Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots B Ilahi, L Sfaxi, F Hassen, B Salem, G Bremond, O Marty, L Bouzaiene, ... Materials Science and Engineering: C 26 (2), 374-377 |
2006 |
| Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0. 4Ga0. 6As/GaAs hetero-capping layer B Ilahi, L Sfaxi, F Hassen, H Maaref, B Salem, G Guillot, A Jbeli, X Marie Applied Physics A 81 (4), 813-816 |
2005 |
| Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs (001) quantum dots B Ilahi, L Sfaxi, G Bremond, M Senes, X Marie, H Maaref The European Physical Journal Applied Physics 30 (2), 101-105 |
2005 |
| Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness B Ilahi, L Sfaxi, G Bremond, M Hjiri, H Maaref physica status solidi (c) 2 (4), 1325-1330 |
2005 |
| Electronic coupling effect on carrier dynamics in InAs/GaAs vertically stacked QD layers M Hjiri, L Sfaxi, F Hassen, B Ilahi, H Maaref, M Senes, X Marie, T Amand Superlattices and Microstructures 36 (1), 39-46 |
2004 |
| Long wavelength vertically stacked InAs/GaAs (001) quantum dots with a bimodal size distribution: Optical properties and electronic coupling B Ilahi, L Sfaxi, H Maaref, G Bremond, G Guillot Superlattices and Microstructures 36 (1), 55-61 |
2004 |
| Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission L Bouzaiene, B Ilahi, L Sfaxi, F Hassen, H Maaref, O Marty, J Dazord Applied Physics A 79 (3), 587-591 |
2004 |
| Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices B Ilahi, L Sfaxi, F Hassen, L Bouzaiene, H Maaref, B Salem, G Bremond, ... physica status solidi (a) 199 (3), 457-463 |
2003 |
| Indium segregation and reevaporation effects on the photoluminescence properties of highly strained In x Ga 1− x As/GaAs quantum wells B Ilahi, L Sfaxi, L Bouzaı̈, F Hassen, H Maaref Physica E: Low-dimensional Systems and Nanostructures 17, 232-234 |
2003 |