Computation of the Effective Hall Factor of p-GaSb

Journal Article

• نوع عمل المنشور: بحث
• المجلة \ الصحيفة: Australian Journal of Basic and Applied Sciences
• رقم العدد: 3
• رقم الإصدار السنوي: 5
• الصفحات: 240-247

مستخلص المنشور

The effective Hall factor (γeff) of p-type GaSb semiconductor was investigated using the

two-band model assuming parabolic valence bands. The calculations were based on the relaxation time

approximation taking into account lattice and impurity scattering effects as a function of the

temperature. Some transport parameters of p-GaSb were determined by assuming that the bands of

heavy and light holes are decoupled. The mobility ratio between the deformation potential and ionized

impurity scattering decreased with elevation of temperature. If the impurity scattering exceeds all other

scattering processes, the approximation of γeff ~ 1 is valid. On the other hand if the lattice scattering

process dominates, the approximation of γeff ~ 1 is not valid. The temperature dependence of the

effective Hall factor was studied. The results showed that the effective Hall factor decreased with

decreasing the temperature.