In this paper, we are presenting the effects of pressure using cold isostatic press (CIP) on the physical properties of nano-SiC-doped bulk sample Mg1.15B1.96C0.04. Effects on lattice parameters, critical current density (Jc), upper critical field (Bc2), irreversibility field (Birr), grain connectivity, anisotropy, and flux pinning force maximum as a function of the pressure have been thoroughly investigated. X-ray diffraction (XRD) analysis shows that a and c lattice parameters are decreased due to the CIP. The mass density of the pressed samples is increased.