Numerical calculation of the ideality factor of non ideal diodes has been performed. The diode cell was

modulated in terms of a parallel connected double diode circuit model containing parasitic shunt and series

resistance effects. The influence of the series resistance on the diode ideality factor has been investigated. At fixed

temperature, the ideality factor remains nearly constant for a large range of the series resistance and then it starts

to decrease at resistance around nearly 105 Ω. The results indicated that the ideality factor reaches unity at

The aim of this study is studying the influence of the donor concentration and temperature on the static

The effective Hall factor (γeff) of p-type GaSb semiconductor was investigated using the

two-band model assuming parabolic valence bands. The calculations were based on the relaxation time

approximation taking into account lattice and impurity scattering effects as a function of the

temperature. Some transport parameters of p-GaSb were determined by assuming that the bands of

Calculations of the electron mobility of n-type InSb have been performed at different temperature regimes using relaxation

time approximation method. The temperatures were classified into three main categories according to the electron mobility

behavior. A high temperature range was considered from room temperature down to approximately 100 K. Intermediate

temperature range was taken from 100 K down to 50 K. The low range was assumed from 50 K down to 10 K. In these