Making a mathematical model for ion implantation in the silicon semiconducter like transistores, IC, VLSI, WLSI circuits is considered multiple jobs because it requires physical, statistical and computer programing aspects.
This thesis explained the physical side by describing the technology of ion implantation in silicon semiconductor, then a detail of the previous techniques of the latest ion implantation theories in order to introduce a model of ion implantation for impurty in silicon semicondactor.

The Electron Paramagnetic Resonance (EPR) study of the iron ions are very important where these paramagnetic centres show several desired properties when doped in the host STO (SrTiO3) crystal. It leads to highly disordered local states, highly conductivity, change the STO from semiconductor to conductor, ferromagnetic, and ferroelectric transition at local symmetry low. This sample can be used in detectors, receivers, transistor, thin film and Non-Volatile Ferroelectric Random-Access Memories (NVFRAMs).

One of the nanomaterials shapes is the compound from nanomaterials called nanocomposit which produce from distribution the nanomaterials, as the point defects, in any materials to get the best properties for these materials.

Three Fe3+ centers with tetragonal symmetry and with the defect axis parallel to the polarization direction were detected in ferroelectric PbTiO3 crystals using electron paramagnetic resonance. All exhibit large zerofield splittings ZFS. Two are assigned to Fe3+-oxygen vacancy dipole defect complexes, and the third to the isolated Fe3+ with distant charge compensation. The Fe3+-VO defect with the largest ZFS converts to the second stable center on annealing; comparison of the cubic ZFS terms show the in-plane oxygen ligands relax

outwards in stable center.