This paper reports on experimental and theoretical investigation of atyical temperature-dependent photoluminescence properties of InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The impact of a post-growth intermixing process on these properties has been studied. For the as-grown sample, the maximum of the emission band follows a sigmoidal function while the photoluminescence linewidth mimics a V-shape function as the temperature increases, from 11 to 300 K.
Heterostructure concepts and low dimensional systems, Quantum Wells, nanowires, quantum dots, tunneling transport, Quantum physics applied to such systems, Optical properties of low dimensional systems (transition rules, polarization etc). Transport properties of 2D and 1D systems. Quantized conductance with Landauer-formalism. Scattering phenomena in 1D. Devices based on quantum phenomena and Coulomb blockade
Postulates of quantum mechanics; wave particle duality, probability, and the Schrödinger equation; one-dimensional Schrödinger equation; operator methods in quantum mechanics, eigenvalues, eigenfunctions; angular momentum; the Schrödinger equation in three-dimensions and the hydrogen atom; matrix representation of operators ; spin; the addition of angular momenta; time-independent perturbation theory.
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