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Mohamed Ramy Abdel-Rahman

Professor

Electrical Engineering

كلية الهندسة
Engineering Building, 2C13
مادة دراسية

EE310 Microelectronic Devices and Circuits

Intrinsic and doped semiconductors, drift and diffusion currents. PN junction diode: basic structure, I-V characteristics, large and small-signal models. Bipolar junction transistor ( BJT): basic structure, modes of operation, dc biasing, dc and small-signal models, single stage BJT amplifiers. Field-effect transistors ( FET): structure and operation of enhancement and depletion MOSFETs, I-V characteristics, dc biasing.

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