Study of Static Dielectric Constant of n-Type InAs
The aim of this study is studying the influence of the donor concentration and temperature on the static
dielectric constant () of heavily doped n-type InAs semiconductor. The variation of donor concentration caused an exponential increase of at high values of donor density. Our calculations indicated that has no meaning at concentration above 3×1016 cm3. Above this value the static dielectric constant diverges so that the polarization catastrophe occurred. The static dielectric constant dependence of resistivity shows that at high resistivity the static dielectric constant appears to be nearly constant and equals the value 14.5. This value is equal to the static
dielectric constant of InAs host semiconductor without doping. One can expect a divergence of at very low resistivity values at which polarization catastrophe can happen.
Numerical calculation of the ideality factor of non ideal diodes has been performed. The diode cell was
modulated in terms of a parallel connected double diode circuit model containing…
The aim of this study is studying the influence of the donor concentration and temperature on the static