INVESTIGATION OF THE IDEALITY FACTOR FOR NON-IDEAL DIODES

Journal Article

• Publication Work Type: Research
• Magazine \ Newspaper: INTERNATIONAL JOURNAL of ACADEMIC RESEARCH
• Issue Number: 2
• Volume Number: 4
• Pages: 156-159

Publication Abstract

Numerical calculation of the ideality factor of non ideal diodes has been performed. The diode cell was

modulated in terms of a parallel connected double diode circuit model containing parasitic shunt and series

resistance effects. The influence of the series resistance on the diode ideality factor has been investigated. At fixed

temperature, the ideality factor remains nearly constant for a large range of the series resistance and then it starts

to decrease at resistance around nearly 105 Ω. The results indicated that the ideality factor reaches unity at

currents 0.5 μA, 2.5 μA, 3.9 μA and 4.2 μA at temperatures 400 K, 300 K, 100 K and 77 K respectively. The

influence of the temperature on the ideality factor has been analyzed. When the temperature increases the ideality

factor decreases exponentially with a level depends on the fixed diode current. In general, the values of the ideality

factor are small at 300 K and 400 K while these values are high at 100 K. The behavior of the ideality factor is

investigated when the voltage is changed while the current of the diode is kept constant. When the voltage

increases the ideality factor increases linearly.