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د. محمد بن عبدالعزيز بن محمد الزامل

Associate Professor

عضوهيئة تدريس بكلية العلوم - قسم الفيزياء والفلك

كليات العلوم
أأ65
المنشورات
مقال فى مجلة
2011

ELECTRON MOBILITY CALCULATIONS OF n-InAs

 

Electron mobility calculations of n-type InAs were carried out at temperatures from 10 K up to 400 K and doping concentration from 6x1020 m-3 to 2.5x1021 m-3. The numerical computations were performed using relaxation time approximation taking into account some elastic scattering mechanisms. The temperature dependence of the electron drift mobility showed a noticeable decrease in the mobility with decreasing of temperature. It was changed, nearly, from the value 40000 cm2/V.s at room temperature to nearly 1300 cm2/V.s at 10 K. The decrease of the calculated drift mobility could be attributed to the influence of the ionized impurity scattering at low temperatures.

نوع عمل المنشور
Research
رقم المجلد
6
رقم الانشاء
2
مجلة/صحيفة
Digest Journal of Nanomaterials and Biostructures
الصفحات
725-729
مزيد من المنشورات
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