ELECTRON MOBILITY CALCULATIONS OF n-InAs

Journal Article

• Publication Work Type: Research
• Magazine \ Newspaper: Digest Journal of Nanomaterials and Biostructures
• Issue Number: 2
• Volume Number: 6
• Pages: 725-729

Publication Abstract

 

Electron mobility calculations of n-type InAs were carried out at temperatures from 10 K up to 400 K and doping concentration from 6x1020 m-3 to 2.5x1021 m-3. The numerical computations were performed using relaxation time approximation taking into account some elastic scattering mechanisms. The temperature dependence of the electron drift mobility showed a noticeable decrease in the mobility with decreasing of temperature. It was changed, nearly, from the value 40000 cm2/V.s at room temperature to nearly 1300 cm2/V.s at 10 K. The decrease of the calculated drift mobility could be attributed to the influence of the ionized impurity scattering at low temperatures.