المنشورات و المؤلفات
Electron mobility calculations of n-type InAs were carried out at temperatures from 10 K up to 400 K and doping concentration from 6x1020 m-3 to 2.5x1021 m-3. The numerical computations were performed using relaxation time approximation taking...
Numerical calculation of the ideality factor of non ideal diodes has been performed. The diode cell was
modulated in terms of a parallel connected double diode circuit model containing parasitic shunt and series
resistance effects. The influence of...
The aim of this study is studying the influence of the donor concentration and temperature on the static
dielectric constant () of heavily doped n-type InAs semiconductor. The variation of donor concentration caused an exponential increase of at...
The effective Hall factor (γeff) of p-type GaSb semiconductor was investigated using the
two-band model assuming parabolic valence bands. The calculations were based on the relaxation time
approximation taking into account lattice and impurity...
Calculations of the electron mobility of n-type InSb have been performed at different temperature regimes using relaxation
time approximation method. The temperatures were classified into three main categories according to the electron mobility...