Novel photosensor based on carbon nitride thin films

Journal Article

Farooq, W Aslam . 2014

• نوع عمل المنشور: VPP project research
• رابط المنشور على الويب: Novel photosensor based on carbon nitride thin films
• المجلة \ الصحيفة: Materials Letters
• رقم العدد: 1
• رقم الإصدار السنوي: 134
• الصفحات: 149–151

مستخلص المنشور

Carbon nitride (C3N4) is gaining considerable research interest due to its unique electrical and optical
properties. Herein, we report a sol–gel spin method for fabrication of Al/p-Si/C3N4/Au Schottky diode.
The current–voltage (I–V) characteristics of the Schottky diode was investigated under dark and various
light intensities. It was observed that the photocurrent of the Schottky diode increases with increase in
light intensity. The transient photocurrent, capacitance, and conductance measurements were
investigated. It was observed that the photocurrent, capacitance, and conductance highly depend on
transient light. The photocurrent, capacitance, and conductance increases after illuminating the Schottky
diode and returns to original value after turning off the illumination. The linear response of the
photocurrent with light intensity suggests that carbon nitride based Schottky diode could be used as
photosensor.