ELECTRON MOBILITY CALCULATIONS OF n-InAs
Electron mobility calculations of n-type InAs were carried out at temperatures from 10 K up to 400 K and doping concentration from 6x1020 m-3 to 2.5x1021 m-3. The numerical computations were performed using relaxation time approximation taking into account some elastic scattering mechanisms. The temperature dependence of the electron drift mobility showed a noticeable decrease in the mobility with decreasing of temperature. It was changed, nearly, from the value 40000 cm2/V.s at room temperature to nearly 1300 cm2/V.s at 10 K. The decrease of the calculated drift mobility could be attributed to the influence of the ionized impurity scattering at low temperatures.
Numerical calculation of the ideality factor of non ideal diodes has been performed. The diode cell was
modulated in terms of a parallel connected double diode circuit model containing…
The aim of this study is studying the influence of the donor concentration and temperature on the static